Textbook in PDF format

This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from the U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E). The material is organized into eight parts with a total of 28 chapters contributed from invited experts that were part of the ARPA-E programs along with chapters from a few select experts from around the world who are actively engaged in GaN and related WBG semiconductor research and development